| PART |
Description |
Maker |
| CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构（2字突发结18 -兆位的DDR - II SRAM的）
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1568KV18-550BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1318CV18-200BZXC |
18-Mbit DDR-II SRAM 2-Word Burst Architecture 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1319BV18-167BZC CY7C1319BV18-278BZC CY7C1321BV |
2M X 8 DDR SRAM, 0.45 ns, PBGA165
512K X 36 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 4-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1170V18-300BZXI CY7C1170V18-300BZC CY7C1170V18 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 512K X 36 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1992BV18-167BZXC CY7C1992BV18-300BZC CY7C1992B |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 9 DDR SRAM, 0.5 ns, PBGA165
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 9 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1418AV18-267BZC |
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1916BV18-250BZC CY7C1316BV18 CY7C1316BV18-167B |
18-Mbit DDR-II SRAM 2-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
| CY7C1323BV25 |
18-Mbit 4-Word Burst SRAM with DDR-I Architecture
|
Cypress Semiconductor
|
| CY7C1319CV18-167BZC CY7C1319CV18-167BZI CY7C1319CV |
18-Mbit DDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
